Three-dimensional luminescence microscopy for quantitative plasma characterization in bulk semiconductors

Important challenges remain in the development of ultrafast laser writing inside semiconductor materials because properties narrow gap cause strong propagation distortions to intense infrared light. Here, we introduce a simple and robust imaging method for high-dynamic-range investigations laser–matter interactions bulk semiconductors. Supported by measurements gallium arsenide silicon, show how z-scan band-to-band radiative recombination enables quantitative reconstruction three-dimensional distributions free-carriers generated nonlinear ionization with ultrashort pulses. The validity is confirmed comparisons transmission microscopy (shadowgraphy) images. superior sensitivity zero-background luminescence allows measurement local carrier densities as low ?1016 cm?3 GaAs that inaccessible shadowgraphy. It provides first direct evidence density plasma far prior focus causes previously reported intensity clamping phenomenon. potential this non-coherent 3D assess complex beam distortion features also exemplified real-time pre-compensation aberration an interacting beam.